Novel Technique Of Source And Drain Engineering For Dual-Material Double-Gate (DMDG) SOI MOSFETS

被引：0

作者：

Yadav, Himanshu ^{[1
]}

Malviya, Abhishek Kumar ^{[1
]}

Chauhan, R. K. ^{[1
]}

机构：

[1] Madan Mohan Malaviya Univ Technol, Dept Elect & Commun, Gorakhpur, Uttar Pradesh, India

来源：

INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, MATERIALS AND APPLIED SCIENCE | 2018年 / 1952卷

关键词：

PERFORMANCE ANALYSIS;

D O I：

10.1063/1.5032001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened Ion current with higher Ion to TOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

引用

页数：6

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