Electrical Properties OF GaAs Doped with Iron

被引：0

作者：

Khludkov, S. S. ^{[1
]}

Prudaev, I. A. ^{[1
]}

Novikov, V. A. ^{[2
]}

Budnitskii, D. L. ^{[1
]}

Lopatetskaya, K. S. ^{[2
]}

机构：

[1] Natl Res Tomsk State Univ, VD Kuznetsov Siberian Phys Tech Inst, Tomsk, Russia

[2] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2014年 / 56卷 / 12期

关键词：

GaAs; electrical properties; iron impurity;

D O I：

10.1007/s11182-014-0196-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence band. The position of the energy level of Fe and the electrical characteristics of GaAs:Fe are independent of the regime of the samples annealing at a temperature below the doping temperature.

引用

页码：1435 / 1438

页数：4

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