From plasma immersion ion implantation to deposition: a historical perspective on principles and trends

被引:69
作者
Anders, A [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
关键词
plasma immersion ion implantation and deposition review;
D O I
10.1016/S0257-8972(02)00066-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasma immersion techniques of surface modification are known under a myriad of names. The family of techniques reaches from pure plasma ion implantation, to ion implantation and deposition hybrid modes, to modes that are essentially plasma film deposition with substrate bias. In the most general sense, all plasma immersion techniques have in common that the surface of a substrate (target) is exposed to plasma and that relatively high substrate bias is applied. The bias is usually pulsed. In this review, the roots of immersion techniques are explored, some going back to the 1800s, followed by a discussion of the groundbreaking works of Adler and Conrad in the 1980s. In the 1990s, plasma immersion techniques matured in theoretical understanding, scaling, and the range of applications. First commercial facilities are now operational. Various immersion concepts are compiled and explained in this review. While gas (often nitrogen) ion implantation dominated the early years, film-forming immersion techniques and semiconductor processing gained importance. In the 1980s and 1990s we have seen exponential growth of the field but signs of slowdown are clear since 1998. Nevertheless, plasma immersion techniques have found, and will continue to have, an important place among surface modification techniques. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:3 / 12
页数:10
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