Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN

被引：29

作者：

Butun, Serkan ^{[1
]}

Gokkavas, Mutlu

Yu, HongBo

Ozbay, Ekmel

机构：

[1] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Bilkent, Ankara, Turkey

[2] Bilkent Univ, Dept Phys, TR-06800 Bilkent, Turkey

[3] Bilkent Univ, Dept Phys, TR-06800 Bilkent, Turkey

[4] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

关键词：

Photodiodes;

D O I：

10.1063/1.2234741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96x10(-10) A/cm(2) at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. (c) 2006 American Institute of Physics.

引用

页数：3

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