Residual stress and optical properties in a post-annealed Ta2O5/SiO2 multilayer prepared by using dual-ion-beam sputtering

The residual stress and optical properties of Ta2O5(H)/SiO2(L) single and multilayers were examined as functions of the annealing temperature (200 similar to 400 degrees C) using dual ion beam sputtering (DIBS). The residual stress of the annealed SiO2, Ta2O5 single layer was released, and all were found to be in compressive stress when the annealing temperature ranged from 200 to 300 degrees C. The residual stress of the as-deposited (HL) multilayer film increased as the number of layers increased. The residual stress of the (HL)(3) and the (HL)(4) films was released as the annealing temperature was increased. The transmittance wavelength of the (HL)(4) layer shifted to a longer wavelength as the temperature was increased and the rms roughness increased.