X-Parameter Measurement and Simulation of a GSM Handset Amplifier

被引：23

作者：

Horn, Jason M. ^{[1
]}

Verspecht, Jan ^{[2
]}

Gunyan, Daniel ^{[1
]}

Betts, Loren ^{[1
]}

Root, David E. ^{[1
]}

Eriksson, Joakim ^{[3
]}

机构：

[1] Agilent Technol, Santa Rosa, CA 95403 USA

[2] BVBA, B-1745 Opwijk, Belgium

[3] Sony Eric Mob Commun AB, SE-221 Lund, Sweden

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

D O I：

10.1109/EMICC.2008.4772247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-parameters, also referred to as the parameters of the Poly-Harmonic Distortion (PHD) nonlinear behavioral model, have been introduced as the natural extension of S-parameters to nonlinear devices under large-signal drive [1]-[3]. This paper describes a new approach to X-parameter characterization and nonlinear simulation - including large-signal experimental model validation - of a commercially available GSM amplifier. A specially configured Nonlinear Vector Network Analyzer (NVNA) and procedure for measuring, for the first time, X-parameters under pulsed bias conditions is presented. The measured pulsed bias X-parameters are then used with the PHD framework to enable accurate nonlinear simulation of device behavior, including harmonics (magnitude and phase) under pulsed bias large-signal conditions with mismatch. Independent NVNA measurements validate the predictions of the X-parameter simulations of output match under drive, and show the inadequacy of "Hot S22" techniques to predict such device performance.

引用

页码：135 / +

页数：2

共 4 条

[1] Broad-band poly-harmonic distortion (PHD) behavioral models from fast automated simulations and large-signal vectorial network measurements [J].