Readout of non-irradiated and irradiated strip detectors with fast analogue electronics

被引：6

作者：

Cindro, V

Kramberger, G

Mikuz, M

Zontar, D

Kaplon, J

Riedler, P

Roe, S

Weilhammer, P

Dabrowski, W

机构：

[1] Univ Ljubljana, Jozef Stefan Inst, SL-1000 Ljubljana, Slovenia

[2] Univ Ljubljana, Dept Phys, SL-1000 Ljubljana, Slovenia

[3] CERN, Geneva, Switzerland

[4] Cracow FPNT, Krakow, Poland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2000年 / 439卷 / 2-3期

关键词：

D O I：

10.1016/S0168-9002(99)00871-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon microstrip detectors with 50 mu m readout pitch were connected to fast LHC-type analogue readout electronics (DMILL SCT32A) and their performance evaluated before and after irradiation. The p-type strips with a length of 4 cm were fabricated on high-resistivity n-bulk wafers by CSEM. Fast neutrons from the TRIGA research reactor in Ljubljana were used to irradiate detectors to two different fluences: 4.5 x 10(13) and 1.5 x 10(14)/cm(2) 1 MeV neutron equivalent non-ionizing energy loss. A Sr-90 beta source setup was used for detector performance measurements. Most of the observed signal/noise degradation after il radiation could be attributed to the signal loss. Around 82% charge collection efficiency was measured at higher fluence 100 V above full depletion voltage as determined with C-V measurements. Measurements were performed during annealing and reverse annealing of effective dopant concentration. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：337 / 343

页数：7

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