Characterization of boron doped CVD diamond films by Raman spectroscopy and X-ray diffractometry

被引：32

作者：

Gonçalves, JAN

Sandonato, GM

Iha, K

机构：

[1] Inst Nacl Pesquisas Espaciais, Lab Associado Plasma, BR-12201970 Sao Jose Dos Campos, SP, Brazil

[2] Inst Tecnol Aeronaut, Div Quim, BR-12228900 Sao Jose Dos Campos, Brazil

来源：

基金：

巴西圣保罗研究基金会;

关键词：

diamond films; X-ray diffractometry; Raman spectroscopy; lattice parameter;

D O I：

10.1016/S0925-9635(02)00103-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron doped diamond films grown by chemical vapor deposition on silicon (1 1 1) were measured by Raman spectroscopy and X-ray diffractometry to investigate the crystallographic direction and the lattice parameters of both the betaSiC and diamond films with different levels of dopant. It was observed that the level of dopant has a significant influence on the lattice parameters for a boron/carbon ratio of 20 000 ppm, and also that the expansion of the lattice parameters was due to compressive thermal stress of diamond films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1578 / 1583

页数：6

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