SiC device technology for high voltage and RF power applications

被引：0
|
作者：
Östling, M [1 ]
Koo, SM [1 ]
Lee, SK [1 ]
Danielson, E [1 ]
Domeij, M [1 ]
Zetterling, CM [1 ]
机构：
[1] Royal Inst Technol, KTH, Dept Microbiol & Informat Technol, S-16440 Kista, Sweden
来源：
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently, Silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.
引用
收藏
页码：31 / 39
页数：9
相关论文
共 50 条
  • [41] An Update on High Voltage SiC Power Devices
    Agarwal, A.
    Zhang, Q.
    Das, M.
    Ryu, S.
    Cheng, L.
    O'Loughlin, M.
    Burk, A.
    Palmour, J.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 39 - 41
  • [42] An Integrated MESFET Voltage Follower LDO for High Power and PSR RF and Analog Applications
    Lepkowski, William
    Wilk, Seth J.
    Ghajar, M. Reza
    Bakkaloglu, Bertan
    Thornton, Trevor J.
    2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2012,
  • [43] Advancement of SiC High-frequency Power Conversion Systems for Medium-Voltage High-Power Applications
    Dong, Dong
    Lin, Xiang
    Ravi, Lakshmi
    Yan, Ning
    Burgos, Rolando
    2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA), 2020, : 717 - 724
  • [44] Load-Pull Investigation of a High-Voltage RF-Power GaN-HEMT Technology in Supply Modulated Applications
    Bengtsson, Olof
    Chevtchenko, Serguei A.
    Doerner, Ralf
    Kurpas, Paul
    Heinrich, Wolfgang
    FREQUENZ, 2011, 65 (7-8) : 217 - 224
  • [45] Thermally stable low resistivity ohmic contacts for high power and high temperature SiC device applications
    Kakanakov, R
    Kassamakova-Kolaklieva, L
    Hristeva, N
    Lepoeva, G
    Zekentes, K
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 205 - 208
  • [46] High quality uniform thick epitaxy of 4H-SiC for high power device applications
    Zhang, Jie
    Mazzola, Janice
    Romano, Esteban
    Hoff, Carl
    Mazzola, Mike
    Casady, Janna
    Casady, Jeff
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 107 - +
  • [47] Intrinsic point defect engineering in silicon high-voltage power device technology
    Sobolev, NA
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1801 - 1806
  • [48] Commercializing Medium Voltage VFD that Utilizes High Voltage SiC Technology
    Shenoy, Pana
    Solis, Octavio
    Zheng, Liping
    2017 IEEE INTERNATIONAL WORKSHOP ON INTEGRATED POWER PACKAGING (IWIPP), 2017,
  • [49] GaN based HEMT technology for Power and RF applications
    Heuken, Michael
    49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019), 2019, : 17 - 20
  • [50] Low Power FDSOI Technology and Devices for RF Applications
    Schwan, C.
    Chew, K. W. J.
    Feudel, T.
    Kammler, T.
    Faul, J.
    Kang, L.
    Taylor, R.
    Huschka, A.
    Kluth, J.
    Carter, R.
    McKay, T.
    Nowak, E.
    Watts, J.
    Harame, D.
    SIGE, GE, AND RELATED MATERIALS: MATERIALS, PROCESSING, AND DEVICES 7, 2016, 75 (08): : 21 - 27
12345