Semiconductor devices using thin films of diamond and other wide band gap materials

被引:0
|
作者
Vaseashta, A [1 ]
机构
[1] Marshall Univ, Dept Phys & Phys Sci, Huntington, WV 25755 USA
来源
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The excellent electrical, optical, and mechanical properties of diamond thin films are the driving force for its current research in producing thin films of diamond. Based upon the unique properties of diamond, enormous state-of-the-art novel electron devices and sensors devices are possible. Several device configurations are provided of hybrid microelectronics, opto-electronic, and other novel devices realizable with the diamond, SiC, GaN, etc wide bandgap material. Thermal management of electronic devices is extremely important in the design of sensors and high-speed high-density electronic circuits with power devices fabricated monolithically. A preliminary theoretical computation for comparison of electrical characteristics of transistor with and without diamond and other wide bandgap materials is presented. Thermal interaction of semiconductor devices,on the substrates as it relates to their close proximity and spacing is addressed. It is suggested that based upon diamond thin films, as a microelectronic lateral extension to complexity, RAM on processors, system on chip (SOC), network on chip, and superchips are possible.
引用
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页码:956 / 962
页数:7
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