Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs

被引：13

作者：

Tseng, CH ^{[1
]}

Chang, TK

Chu, FT

Shieh, JM

Dai, BT

Cheng, HC

Chin, A

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

breakdown field; gate oxide; inductively coupled plasma (ICP); leakage current; thin-film transistor (TFT);

D O I：

10.1109/LED.2002.1004226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By optimizing the inductively coupled plasma (ICP) oxidation condition, a thin oxide of 10 nm has been grown at 350degreesC to achieve excellent gate oxide integrity of low leakage current < 5x10(-8) A/cm(2) (at 8 MV/cm), high breakdown field of 9.3 MV/cm and low interface trap density of 1.5x10(11)/eV cm(2). The superior performance poly-Si TFTs using such a thin ICP oxide were attained to achieve a high ON current of 110 μA/μm at V-D=1 V and V-G = 5 V and the high electron field effect mobility of 231 cm(2)/V.S.

引用

页码：333 / 335

页数：3

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