Characterization of Ag/Ti Schottky contact on ZnO thin film under UV exposure

被引:1
作者
Teja, Vikram [1 ]
Sarkar, Argha [2 ]
Kundu, Mayuri [3 ]
Sreenath, M. [4 ]
机构
[1] Sree Vidyanikethan Engn Coll, Dept ECE, Nanoelect Lab, Tirupati 517102, Andhra Pradesh, India
[2] Vishnu Inst Technol, Dept ECE, Bhimavaram 534202, India
[3] Vishnu Inst Technol, Dept CSE, Bhimavaram 534202, India
[4] BNM Inst Technol, Dept ECE, Bangalore 560070, Karnataka, India
关键词
Ultraviolet light; ZnO thin film; Schottky contact; Barrier height; Ideality factor; Saturation current; OHMIC CONTACT; FABRICATION;
D O I
10.1016/j.matpr.2020.09.838
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin film is fabricated by using thermal vacuum coating unit and exposed to the UV light where the target is the glass substrate. ZnO thin film is fabricated and Ti (100 nm)/Ag (100 nm) are deposited by the vacuum evaporation technique and shadow mask. The deposited contacts undergo annealing treatment to improve the crystal properties of the substrate. The substrate is exposed then to the UV light to analyse the thin film current and voltage performance characteristics of the deposited contacts by using a I-V parameter analyzer (Keysight B2902A). Several parameters like barrier height, saturation current, ideality factor and specific contact resistance are also estimated using a special method using the Schottky barrier height (SBH) method instead of another mechanism like transmission line method (TLM). (c)& nbsp;2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology.
引用
收藏
页码:3655 / 3657
页数:3
相关论文
共 12 条
  • [1] SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE - LIMITATIONS OF FORWARD I-V METHODS
    AUBRY, V
    MEYER, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 7973 - 7984
  • [2] ZnO Schottky barriers and Ohmic contacts
    Brillson, Leonard J.
    Lu, Yicheng
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [3] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
    CHEUNG, SK
    CHEUNG, NW
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 85 - 87
  • [4] Gur E., 2007, J PHYS-CONDENS MAT, V19, P196
  • [5] Habibi MH, 2010, CURR NANOSCI, V6, P324
  • [6] Simulation and Fabrication of SAW-Based Gas Sensor with Modified Surface State of Active Layer and Electrode Orientation for Enhanced H2 Gas Sensing
    Hasan, Md. Nazibul
    Maity, Santanu
    Sarkar, Argha
    Bhunia, Chandan Tilak
    Acharjee, Debabrata
    Joseph, Aneesh M.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (02) : 679 - 686
  • [7] Pt/ZnO nanowire Schottky diodes
    Heo, YW
    Tien, LC
    Norton, DP
    Pearton, SJ
    Kang, BS
    Ren, F
    LaRoche, JR
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3107 - 3109
  • [8] Zinc oxide films prepared by sol-gel spin coating technique
    Kamaruddin, Sharul Ashikin
    Chan, Kah-Yoong
    Yow, Ho-Kwang
    Sahdan, Mohd Zainizan
    Saim, Hashim
    Knipp, Dietmar
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 104 (01): : 263 - 268
  • [9] Nanocrystalline TiO2/ZnO thin films:: Fabrication and application to dye-sensitized solar cells
    Mane, RS
    Lee, WJ
    Pathan, HM
    Han, SH
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (51) : 24254 - 24259
  • [10] Teja V, 2020, INT J NANO DIMENS, V11, P199