GaN-based Class-F Power Amplifier for 5G Applications

被引：5
作者：
Bhargava, Gaurav [1 ]
Rath, Pinak Kumar [1 ]
Majumdar, Shubhankar [1 ]
机构：
[1] Natl Inst Technol Meghalaya, Dept Elect & Commun Engn, Shillong 793003, Meghalaya, India
来源：
2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON | 2022年
关键词：
GaN-HEMT; Power amplifier; Intermodulation distortion; DESIGN;
D O I：
10.1109/MAPCON56011.2022.10047615
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the class F power amplifier is proposed and developed for 5G applications. The design methods include simulation followed by layout design and fabrication. Then, 1 tone Harmonic balance analysis of the fabricated structure of PA is performed to obtain the simulation and measurement results of PAE 79.251% and 12.194%, Gain of 16.54 dB and 13.03 dB, ACP of - 28.09 dBc and - 22.039 dBc, and 3(rd) and 5(th) order harmonics distortion of -20.5 dBc and -48.9 dBc and -18.4 dBc and -45.2 dBc respectively. Also, the study of MAE (in %) performance for Pout, gain, PAE, ACP, 3(rd) and 5(th) harmonic distortion having values 0.0064, 0.0023, 0.0072, 0.00605, 0.0021, and 0.0037 respectively is analyzed and verified.
引用
收藏
页码：1444 / 1449
页数：6
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