X-band high-power microstrip AlGaN/GaN HEMT amplifier MMICs

被引：0

作者：

van Raay, F. ^{[1
]}

Quay, R. ^{[1
]}

Kiefer, R. ^{[1
]}

Bronner, W. ^{[1
]}

Seelmann-Eggebert, M. ^{[1
]}

Schlechtweg, M. ^{[1
]}

Mikulla, M. ^{[1
]}

Weimann, G. ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tulla Str 72, D-79108 Freiburg, Germany

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

GaN power amplifiers; efficiency; MMIC; microstrip;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes AlGaN/GaN power amplifier MMICs in microstrip line technology on s.i. SiC substrate for X-band frequencies with output power levels well beyond 15 W. A dual-stage design supplies 18 dB of gain at 10 GHz with a pulsed output power of 20 W at V-DS = 40 V. Further, a single-stage MMIC with 6 mm gate width provides a P-1dB of 14.5 W and a maximum output power of 22.4 W, also at 10 GHz.

引用

页码：1368 / +

页数：2

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