Using Horizontal Carbon Nanotubes in Field Emission Cathodes

被引：0

作者：

Zhigalov, V. ^{[1
]}

Petukhov, V. ^{[1
]}

Emelianov, A. ^{[1
]}

Golishnikov, A. ^{[1
]}

Putrya, M. ^{[1
]}

机构：

[1] Natl Res Inst Elect Technol, Moscow, Russia

来源：

PROCEEDINGS OF THE 2017 IEEE RUSSIA SECTION YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (2017 ELCONRUS) | 2017年

关键词：

field emission; carbon nanotubes; planar field cathodes; vacuum nanoelectronics;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold field emission is the intrinsic property for nanocarbon materials. Emission characteristics of planar field cathodes with carbon nanotubes (CNT) deposited from solution to Si, Al, Pd substrates were studied. The field emission threshold value for horizontally aligned CNT was found as low as 4 V/mu m. However, the field enhancement in these samples is negligible (<10). We propose to use low threshold field emission CNT films where main field enhancement is achieved by silicon-based technology. A novel design of field emission cathode consisting of horizontally aligned CNT as a part of field enhancing Si structures is shown.

引用

页码：1449 / 1451

页数：3

共 10 条

[1] Field emission of different oriented carbon nanotubes [J].