Controlled Re doping in MoS2 by chemical vapor deposition

2D materials have been extensively studied due to their unique optical and electronic properties. Compositional doping in these materials could further enable useful utilization of these materials in electronics, optoelectronics and energy harvesting. However, scalable one pot synthesis of doped Transition Metal Dichalcogenides (TMDs) has been challenging. Here we develop a facile approach for controlled one step Rhenium (Re) doping in multilayer Molybdenum Disulphide (MoS2) by powder Chemical Vapor Deposition (CVD). Interestingly, we find the morphology of MoS2 is also dependent on the dopant concentrations with a flower like morphology observed at higher doping concentrations. Further we demonstrate a clear correlation between the shift in PL and Raman peaks as a function of Re doping concentrations. A red shift in PL is observed with increased concentration of Re atoms. The ability to controllably dope thin layers of MoS2 could open up unique applications of this material in areas hitherto unexplored.