Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

被引:24
作者
Yang, Joel K. W. [1 ]
Kerman, Andrew J. [2 ]
Dauler, Eric A. [2 ]
Cord, Bryan [1 ]
Anant, Vikas [1 ,3 ]
Molnar, Richard J. [2 ]
Berggren, Karl K. [1 ]
机构
[1] MIT, Cambridge, MA 02139 USA
[2] MIT, Lincoln Lab, Lexington, MA 02420 USA
[3] Exponent Inc, Natick, MA 01760 USA
关键词
Critical current; detection efficiency; fabrication; single-photon detectors; FABRICATION;
D O I
10.1109/TASC.2009.2017953
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.
引用
收藏
页码:318 / 322
页数:5
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