Epitaxial Structures for InGaAs/InP Avalanche Photodiodes

被引：0
|
作者：
Budtolaev, A. K. [1 ]
Khakuashev, P. E. [1 ]
Chinareva, I. V. [1 ]
Gorlachuk, P. V. [2 ]
Ladugin, M. A. [2 ]
Marmaluk, A. A. [2 ]
Ryaboshtan, Yu. L. [2 ]
Yarotskaya, I. V. [2 ]
机构：
[1] Orion Res & Prod Assoc, Moscow 111538, Russia
[2] Polyus Res Inst, Moscow 117342, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2017年 / 62卷 / 03期
关键词：
epitaxial heterostructures; InGaAs/InP; MOS hydride epitaxy; avalanche photodiode;
D O I：
10.1134/S1064226917030056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
引用
收藏
页码：304 / 308
页数：5
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