Analysis of Anomalously Large RTS Noise Amplitudes in Tunneling Field-effect Transistors

被引:2
作者
Kim, So-Yeong [1 ]
Oh, Dong-Jun [1 ]
Kwon, Sung-Kyu [1 ]
Song, Hyeong-Sub [1 ]
Lim, Dong-Hwan [2 ]
Choi, Chang-Hwan [2 ]
Lee, Ga-Won [1 ]
Lee, Hi-Deok [1 ]
机构
[1] Chungnam Natl Univ, Dept Elect Engn, Daejeon 305764, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
Tunneling field-effect transistor (TFET); band-to-band tunneling (BTBT); RTS noise amplitude; effective channel width; tunneling path; LOW-FREQUENCY NOISE; MOSFETS;
D O I
10.5573/JSTS.2018.18.2.193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling field-effect transistors (TFETs) are investigated. Although recent studies have been conducted on the RTS noise in TFETs, few of them have analyzed the factors leading to their large amplitudes. Many studies have reported that the TFET drain current fluctuations caused by RTS noise fall within a range of approximately 5-30%, which is considerably higher than that for metal-oxide-semiconductor field-effect transistors. Through threedimensional simulations, two factors were identified to contribute to the degradation of TFETs tunneling probabilities and thus lead to large RTS noise amplitudes. One of these factors is the existence of a local and dominant tunneling path in the tunneling region and the other is the relatively short distance between the tunneling path and the single trap.
引用
收藏
页码:193 / 199
页数:7
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