Preparation and growth mechanism of molybdenum trioxide whisker

被引：12

作者：

Li, JQ ^{[1
]}

Wei, P ^{[1
]}

Chen, J ^{[1
]}

Li, RT ^{[1
]}

机构：

[1] Tsing Hua Univ, State Key Lab New Ceram & Fine Proc, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2002年 / 85卷 / 08期

关键词：

D O I：

10.1111/j.1151-2916.2002.tb00415.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new whisker, alpha-MoO3, was fabricated via molybdenum thread oxidation at 973, 1023, and 1173 K. Various morphologies of the whiskers, such as flakelike, platelike, and needle-like, were observed under different fabrication conditions. The lateral surfaces of the whiskers were close-packed (010) plane, and the growth direction was [001], which related to the unique layered structure of the alpha-MoO3 crystal. Growth of the MoO3 whiskers was attributed to a vapor-liquid-solid (VLS) mechanism at 1023 and 1173 K, whereas, at 973 K, growth was attributed to a vapor-liquid (VL) mechanism.

引用

页码：2116 / 2118

页数：3

共 8 条

[1] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[2] SYNTHESIS AND PROPERTIES OF THIN-FILM POLYMORPHS OF MOLYBDENUM TRIOXIDE
CARCIA, PF
MCCARRON, EM
[J]. THIN SOLID FILMS, 1987, 155 (01) : 53 - 63
[3] CHANDRASEKHARAI.MS, 1967, CHARACTERIZATION HIG, P496
[4] *ICDD, 761003 ICDD JCPDS
[5] *ICDD, 35609 ICDD JCPDS
[6] The morphological evolution of the MoO3(010) surface during reactions in methanol-air mixtures
Smith, RL
Rohrer, GS
[J]. JOURNAL OF CATALYSIS, 1998, 180 (02) : 270 - 278
[7] An atomic force microscopy study of the morphological evolution of the MoO3 (010) surface during reduction reactions
Smith, RL
Rohrer, GS
[J]. JOURNAL OF CATALYSIS, 1996, 163 (01) : 12 - 17
[8] STUDY OF FILAMENTARY GROWTH OF SILICON CRYSTALS FROM VAPOR
WAGNER, RS
ELLIS, WC
ARNOLD, SM
JACKSON, KA
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2993 - +

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