Enhancement-mode AlGaN/GaN HEMTs with low on-resistance and low knee-voltage

被引：7

作者：

Cai, Yong ^{[1
]}

Zhou, Yugang ^{[1
]}

Lau, Kei May ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2006年 / E89C卷 / 07期

关键词：

enhancement mode; AlGaN/GaN; HEMT fluoride; plasma treatment; threshold voltage;

D O I：

10.1093/ietele/e89-c.7.1025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low oh-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 mu m-long gate exhibits a threshold voltage of 0.9 V, a knee-voltage of 2.2 V, a maximum drain current density of 3 10 mA/mm, a peak gm of 148 mS/mm, a current gain cutoff frequency fT of 10.1 GHz and a maximum oscillation frequency f(max) of 34.3 GHz. In addition, the fluoride-based plasma treatment was also found to be effective in lowering the gate leakage current, in both forward and reverse bias. Two orders of magnitude reducation in gate leakage current was observed in the. fabricated E-mode HEMTs compared to the conventional D-mode HEMTs without fluoride-based plasma treatment.

引用

页码：1025 / 1030

页数：6

共 13 条

[1] Non-recessed-gate enhancement-mode AlGaN/GaN high electron mobility transistors with high RF performance [J].

Endoh, A ;

Yamashita, Y ;

Ikeda, K ;

Higashiwaki, M ;

Hikosaka, K ;

Matsui, T ;

Hiyamizu, S ;

Mimura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4B) :2255-2258

[2] Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate [J].

Hu, X ;

Simin, G ;

Yang, J ;

Khan, MA ;

Gaska, R ;

Shur, MS .

ELECTRONICS LETTERS, 2000, 36 (08) :753-754

[3] 12 W/mm AlGaN-GaNHFETs on silicon substrates [J].

Johnson, JW ;

Piner, EL ;

Therrien, R ;

Rajagopal, P ;

Roberts, JC ;

Brown, JD ;

Singhal, S ;

Linthicum, KJ .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (07) :459-461

[4]

Khan MA, 1996, APPL PHYS LETT, V68, P514, DOI 10.1063/1.116384

[5] Maximum current in nitride-based heterostructure field-effect transistors [J].

Koudymov, A ;

Fatima, H ;

Simin, G ;

Yang, J ;

Khan, MA ;

Tarakji, A ;

Hu, X ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3216-3218

[6] High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate [J].

Kumar, V ;

Kuliev, A ;

Tanaka, T ;

Otoki, Y ;

Adesida, I .

ELECTRONICS LETTERS, 2003, 39 (24) :1758-1760

[7] AlGaN/GaN HEMTs on SiC with fT of over 120-GHz [J].

Kumar, V ;

Lu, W ;

Schwindt, R ;

Kuliev, A ;

Simin, G ;

Yang, J ;

Khan, MA ;

Adesida, I .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) :455-457

[8] Recessed-gate enhancement-mode GaNHEMT with high threshold voltage [J].

Lanford, WB ;

Tanaka, T ;

Otoki, Y ;

Adesida, I .

ELECTRONICS LETTERS, 2005, 41 (07) :449-450

[9]

Moon J. S., 2002, Device Research Conference (Cat. No.02TH8606), P23, DOI 10.1109/DRC.2002.1029488

[10] Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors [J].

Rumyantsev, SL ;

Pala, N ;

Shur, MS ;

Gaska, R ;

Levinshtein, ME ;

Khan, MA ;

Simin, G ;

Hu, X ;

Yang, J .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6726-6730

← 1 2 →