All-optical switch utilizing intersubband transition in GaN quantum wells

被引：86

作者：

Iizuka, Norio ^{[1
]}

Kaneko, Kei ^{[1
]}

Suzuki, Nobuo ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2006年 / 42卷 / 7-8期

关键词：

gallium nitride; intersubband transition; optical switches; quantum wells;

D O I：

10.1109/JQE.2006.878189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband transition (ISBT) in GaN quantum wells (QWs) was investigated from the viewpoint of application to ultrafast all-optical switches. The effect of crystalline quality on the absorption saturation characteristics was examined and reduction of edge dislocations was found to be a crucial factor in decreasing operation energy. Then, the switching performance was investigated for devices with improved crystalline quality. Modulation of signal pulses with a pulse interval of less than 1 ps was confirmed. Another device displayed gate-switch operation with an extinction ratio of greater than 10 dB. Comparison of the absorption recovery process in both devices suggested that the process is strongly affected by the QW structure.

引用

页码：765 / 771

页数：7

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