Photovoltaic study of ZnSe/GaAs heterostructures

被引：2

作者：

Wang, JB ^{[1
]}

Chen, DY ^{[1
]}

Jin, CX ^{[1
]}

Lu, F ^{[1
]}

Sun, HH ^{[1
]}

Wang, X ^{[1
]}

机构：

[1] FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.56.1416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ZnSe/GaAs heterojunctions formed by epitaxially grown ZnSe thin films on S-treated GaAs substrates are characterized by the photovoltaic measurements. By analyzing the photovoltaic spectra obtained at different temperatures, the broad-band photovoltaic signal is assigned to the cross-band photon-absorption transitions between the valence band of GaAs and the conduction band of ZnSe near the heterointerface. The band alignment of the ZnSe/S-GaAs heterojunction is determined to be of a type-II configuration with a conduction-band offset of 168 meV at room temperature.

引用

页码：1416 / 1421

页数：6

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