Preparation and characterization of Cu2CoSnS4 thin films for solar cells via co-electrodeposition technique: Effect of electrodeposition time

被引：36

作者：

Beraich, M. ^{[1
,3
]}

Taibi, M. ^{[2
]}

Guenbour, A. ^{[3
]}

Zarrouk, A. ^{[3
]}

Boudalia, M. ^{[3
]}

Bellaouchou, A. ^{[3
]}

Tabyaoui, M. ^{[3
]}

Mansouri, S. ^{[4
]}

Sekkat, Z. ^{[5
,6
,7
]}

Fahoume, M. ^{[1
]}

机构：

[1] Ibn Tofail Univ, Dept Phys, Lab Phys Condensed Matter, Kenitra, Morocco

[2] Univ Mohammed 5, Ecole Normale Super, LPCMIO, CSM, Rabat, Morocco

[3] Mohammed V Univ, Lab Mat Nanotechnol & Environm, Fac Sci, Av Ibn Battouta,POB 1014, Rabat, Morocco

[4] Univ Hassan II Casablanca, LIMAT Thermostruct Mat & Polymers Team, Fac Sci Ben Msik, Blvd Cdt Driss Hard,BP 7955, Casablanca, Morocco

[5] Univ Mohammed V Rabat, Fac Sci, Dept Chem, Rabat, Morocco

[6] MAScIR, Opt & Photon Ctr, Rabat, Morocco

[7] Osaka Univ, Dept Appl Phys, 2-1 Yamadaoka, Suita, Osaka, Japan

来源：

OPTIK | 2019年 / 193卷

关键词：

Synthesis; Cu2CoSnS4; Thin film; Effect time; Electrodeposition; Solar cell; SEMICONDUCTOR CU2MSNS4 M; FABRICATION;

D O I：

10.1016/j.ijleo.2019.162996

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quaternary compound Cu2CoSnS4 (CCTS) is a potential candidate absorber layer in thin film solar cells. In this work the Cu2CoSnS4 (CCTS) thin film was synthesized by co-electrodeposition of Cu-Co-Sn-S precursors on Molybdenum substrate, followed by a high temperature (500 degrees C) sulfurization under Argon atmosphere. The effect of the electrodeposition time of CCTS precursors (Cu, Sn, Co, S) on the crystallographic structure, morphology, composition and optical band gap of CCTS thin films was investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersion spectroscopy. From the results, it was found that the properties of the sample can be improved by decreasing the deposition time and we have found that as the deposition time increases, the amount of the secondary phase Cu2-xS increases. The elemental composition is enriched in Co and S and depleted in Cu with increasing time. The band gap was determined from diffuse reflectance and found for all films in the range of 1.4-1.5 eV.

引用

页数：6

共 26 条

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