Antimony adsorption on the Si(111) surface with the 7x7 and root 3x root 3-Ga structures studied by scanning tunneling microscopy

被引：5

作者：

Kusumi, Y

Fujita, K

Ichikawa, M

机构：

[1] Joint Research Center for Atom Technology, Angstrom Technology Partnership, Tsukuba, Ibaraki 305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.580639

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning tunneling microscopy is used to study the initial stage of Sb adsorption on Si(lll) surfaces with the 7X7 and root 3X root 3-Ga structures. It has been found that Sb is preferentially adsorbed on the 7X7 regions at 430 degrees C, owing to the difference in the chemical reactivity and the Sb diffusivity between two reconstruction surfaces. Using this phenomenon, stripe patterns with the Sb-adsorbed 56-nm-wide 7x7 regions and 35-nm-wide root 3x root 3-Ga regions are formed for a demonstration of a selective adsorption of Sb on the nanometer scale. (C) 1997 American Vacuum Society.

引用

收藏

页码：1603 / 1607

页数：5

相关论文

共 20 条

[1] ANTIMONY ADSORPTION ON SILICON (111) ANALYZED IN REAL-TIME BY INSITU ELLIPSOMETRY [J].

ANDRIEU, S ;

DAVITAYA, FA .

SURFACE SCIENCE, 1989, 219 (1-2) :277-293

[2] THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES [J].

BARNETT, SA ;

WINTERS, HF ;

GREENE, JE .

SURFACE SCIENCE, 1986, 165 (2-3) :303-326

[3] THERMAL AND PHOTOCHEMICAL OXIDATION OF SI(111) - DOPING EFFECT AND THE REACTION-MECHANISM [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW B, 1991, 44 (16) :9129-9132

[4] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[5] GEOMETRIC AND ELECTRONIC-STRUCTURE OF SB ON SI(111) BY SCANNING TUNNELING MICROSCOPY [J].

ELSWIJK, HB ;

DIJKKAMP, D ;

VANLOENEN, EJ .

PHYSICAL REVIEW B, 1991, 44 (08) :3802-3809

[6] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].

FARROW, RFC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907

[7]

Fujita K, 1996, APPL PHYS LETT, V68, P631, DOI 10.1063/1.116491

[8] Self-organizing modification of Si(111)-3 root x3 root R30 degrees-Ga surfaces on the nanometer scale [J].

Fujita, K ;

Kusumi, Y ;

Ichikawa, M .

SURFACE SCIENCE, 1996, 357 (1-3) :490-494

[9] Nanometer-scale passivation of Si/(111) surfaces by using the root 3x root 3-Ga reconstruction [J].

Fujita, K ;

Kusumi, Y ;

Ichikawa, M .

APPLIED SURFACE SCIENCE, 1996, 107 :6-10

[10] DEFECT SELF-ANNIHILATION IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH [J].

HORNVONHOEGEN, M ;

LEGOUES, FK ;

COPEL, M ;

REUTER, MC ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1991, 67 (09) :1130-1133