Integral function method for determination of nonlinear harmonic distortion

被引：55

作者：

Cerdeira, A

Alemán, MA

Estrada, M

Flandre, D

机构：

[1] CINVESTAV, Dept Elect Engn, Sect Solid State Elect, Mexico City 07300, DF, Mexico

[2] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 12期

关键词：

integral function method; harmonic distortion; intermodulation distortion; voltage intercept points; amplifiers; analog circuits; MOSFET;

D O I：

10.1016/j.sse.2004.06.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The analysis of harmonic distortion is of prime importance for the analog and mixed integrated circuits. Recently we presented a new integral function method (IFM), based on a completely new principle, which allows the calculation of harmonic distortion using the DC output characteristic of devices or circuits. In this work we complement the integral function method to provide direct calculation of the following distortion figures: total harmonic distortion (THD), second harmonic distortion (HD2) and third harmonic distortion (HD3), voltage intercept points (VIP) and the intermodulation distortion (IMD). The comparison with the same distortion figures calculated by the Fourier coefficients (FC), by direct AC measurements and from FFT in simulators, indicates that results obtained by IFM give an excellent agreement in the full range of the analyzed active regions. The IFM combines simplicity and computer efficiency with accuracy and with the possibility to easily analyze the distortion when varying any of the circuit or device parameters. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：2225 / 2234

页数：10

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