Quinhydrone/methanol treatment for the measurement of carrier lifetime in silicon substrates

被引：59

作者：

Takato, H ^{[1
]}

Sakata, I ^{[1
]}

Shimokawa, R ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 8A期

关键词：

lifetime; mu-PCD; quinhydrone; surface passivation; silicon; polycrystalline silicon;

D O I：

10.1143/JJAP.41.L870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quinhydrone/methanol treatment for the measurement of carrier lifetime in crystalline silicon Substrates has been investigated. To-estimate the surface passivation effect, the lifetimes of the silicon substrates were measured using the microwave photoconductive decay method. The measured lifetime is dependent on quinhydrone concentration and passivation time. The 0.01 mol/dm(3) quinhydrone/methanol treatment exhibited a good passivation effect, and a very low surface recombination velocity was obtained. The quinhydrone/methanol treatment can provide a reliable lifetime map of silicon wafers since a constant lifetime value without degradation can be obtained. Therefore, the quinhydrone/methanol treatment can be used for estimating the bulk lifetime of silicon substrates.

引用

页码：L870 / L872

页数：3

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