Do we really understand dislocations in semiconductors?

被引：35

作者：

Jones, R ^{[1
]}

机构：

[1] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 71卷

关键词：

silicon; beta dislocation; impurities;

D O I：

10.1016/S0921-5107(99)00344-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of dislocations in Si. GaAs and GaN are reviewed. Although, theoretical investigations favour a reconstruction eliminating, or reducing, the electrical activity in each case, with a consequent increase in the barrier for dislocation motion, there are problems in reconciling these results with experiment. Tt may be that the influence of impurities or point defects cannot be overlooked. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：24 / 29

页数：6

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