Laterally-driven silicon RF micro-switch with high isolation

被引：2

作者：

Kamide, Sho ^{[1
]}

Suzuki, Kenichiro ^{[1
]}

机构：

[1] Ritsumeikan Univ, Coll Sci & Engn, Shiga 5258577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6B期

关键词：

isolation; transmission line; laterally-driven micro-switch; electrostatic force; SOI process;

D O I：

10.1143/JJAP.45.5637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Few researches have been so far investigated in applying lateral motional micro electro mechanical system (MEMS) structure to a micro-switch. In this paper we report on the design and fabrication of a laterally-driven silicon RF micro-switch, which is based on a capacitive-type series switch. The isolation is greatly improved by using lateral motion in mutually opposite directions. In addition, this lateral movement is effective to alleviate the adhesion of a contact area. The cooperation of electrostatic lateral force with a spring force increases the release force by 28%. The fabricated switch is expected to have the isolation of -47.6 dB at 2 GHz and the insertion loss of less than 0.2 dB. The silicon RF transmission line proposed here helps the process very easy because of keeping the overall structure simple.

引用

页码：5637 / 5641

页数：5