Green luminescence in Mg-doped GaN

被引：129

作者：

Reshchikov, M. A. ^{[1
]}

Demchenko, D. O. ^{[1
]}

McNamara, J. D. ^{[1
]}

Fernandez-Garrido, S. ^{[2
]}

Calarco, R. ^{[2
]}

机构：

[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[2] Paul Drude Inst Festkorperlektron, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 03期

关键词：

PHOTOLUMINESCENCE BANDS; ENERGY; PLASMA; DEFECTS; GALLIUM;

D O I：

10.1103/PhysRevB.90.035207

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands remain unidentified. One of them is the green luminescence band (GL2) having a maximum at 2.35 eV which was observed previously in undoped GaN grown by molecular-beam epitaxy in Ga-rich conditions. The same PL band was observed in Mg-doped GaN, also grown in very Ga-rich conditions. The unique properties of the GL2 band allowed us to reliably identify it in different samples. The best candidate for the defect which causes the GL2 band is a nitrogen vacancy (V-N). We propose that transitions of electrons from the conduction band to the +/2+ transition level of the V-N defect are responsible for the GL2 band in high-resistivity undoped and Mg-doped GaN.

引用

页数：14

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