Oxidation of ZrB2-SiC Ultrahigh-Temperature Ceramic Composites in Dissociated Air

被引：48

作者：

Marschall, Jochen ^{[1
]}

Pejakovic, Dusan A. ^{[1
]}

Fahrenholtz, William G. ^{[2
]}

Hilmas, Greg E. ^{[2
]}

Zhu, Sumin ^{[2
]}

Ridge, Jerry ^{[3
,4
]}

Fletcher, Douglas G. ^{[5
]}

Asma, Cem O. ^{[5
]}

Thomel, Jan ^{[5
]}

机构：

[1] SRI Int, Mol Phys Lab, Menlo Pk, CA 94025 USA

[2] Missouri Univ Sci & Technol, Dept Mat Sci & Engn, Rolla, MO 65409 USA

[3] NASA, Ames Res Ctr, Thermal Protect Mat & Syst Branch, Moffett Field, CA 94035 USA

[4] ELORET Corp, Sunnyvale, CA 94086 USA

[5] Von Karman Inst Fluid Dynam, Aeronaut & Aerosp Dept, B-1640 Rhode St Genese, Belgium

来源：

JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER | 2009年 / 23卷 / 02期

基金：

美国国家科学基金会;

关键词：

ATOMIC OXYGEN RECOMBINATION; DIBORIDE-SILICON CARBIDE; ZIRCONIUM DIBORIDE; PASSIVE TRANSITION; REENTRY CONDITIONS; 1500-DEGREES-C; CATALYCITY; PRESSURE; BEHAVIOR; HAFNIUM;

D O I：

10.2514/1.39970

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The oxidation behavior and surface properties of hot-pressed ZrB2-SiC ultrahigh-temperature ceramic composites are investigated under aerothermal heating conditions in the high-temperature, low-pressure partially dissociated airstream of the 1.2 MW Plasmatron facility at the von Karman Institute for Fluid Dynamics. Samples aer oxidized at different flow enthalpies for exposure times of up to 20 min at surface temperatures ranging from 1250 to 1575 degrees C. The microstructure and composition of the resulting oxide layers are characterized using electron and optical microscopies, x-ray diffraction, and energy-dispersive x-ray analysis. Comparisons are made with samples oxidized under similar temperature and pressure conditions in a furnace test environment in which atomic oxygen concentrations are negligible. Changes in surface optical properties are documented using spectral reflectance measurements, and effective catalytic efficiencies are estimated using computational fluid dynamics calculations together with measured surface temperatures and heat fluxes.

引用

页码：267 / 278

页数：12

共 53 条

[1] ACTIVE TO PASSIVE TRANSITION IN THE OXIDATION OF SILICON-CARBIDE AT HIGH-TEMPERATURE AND LOW-PRESSURE IN MOLECULAR AND ATOMIC OXYGEN [J].