Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction

被引：87

作者：

Chen, Chun-Chung ^{[1
]}

Li, Zhen ^{[1
]}

Shi, Li ^{[2
,3
]}

Cronin, Stephen B. ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[3] Univ Texas Austin, Texas Mat Inst, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

关键词：

GRAPHENE FILMS; RAMAN-SPECTRA; HIGH-QUALITY; TEMPERATURE; FUNDAMENTALS; TRANSPORT; GRAPHITE; DIODES;

D O I：

10.1063/1.4866335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4 x 10(6) Wm(-2)K(-1), which is below the 10(7)-10(8) Wm(-2)K(-1) values previously reported for graphene/SiO2 interface. (C) 2014 AIP Publishing LLC.

引用

页数：4

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