Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

被引：16

作者：

Ramonas, M ^{[1
]}

Matulionis, A ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ensemble Monte Carlo simulation of two-dimensional electron transport is performed for a biased undoped AlGaN/GaN channel. The effect of hot phonons on electron drift velocity and energy dissipation is investigated, the model is found correct within a factor of similar to2 when LO-phonon conversion lifetime is assumed to be 0.35 ps.

引用

页码：S424 / S426

页数：3

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