Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexity

被引:34
作者
Abraham, Rohit [4 ]
Kovalenko, Maksym V. [1 ,4 ]
Ielmini, Daniele [2 ,3 ]
Milozzi, Alessandro [1 ,2 ,3 ]
Tsarev, Sergey [1 ,4 ]
Bronnimann, Rolf [4 ]
Boehme, Simon C. [1 ,4 ]
Wu, Erfu [4 ]
Shorubalko, Ivan [4 ]
机构
[1] Swiss Fed Inst Technol, Inst Inorgan Chem, Dept Chem & Appl Biosci, CH-8093 Zurich, Switzerland
[2] Politecnico Milano, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
[3] IU NET, I-20133 Milan, Italy
[4] Empa Swiss Fed Labs Mat Sci & Technol, CH-8600 Dubendorf, Switzerland
基金
欧盟地平线“2020”;
关键词
TIMING-DEPENDENT PLASTICITY; SYNAPSE; SELECTIVITY; MIGRATION; MEMRISTOR; IMPLEMENTATION; DEFECTS; DEVICE; CELLS;
D O I
10.1126/sciadv.ade0072
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
With increasing computing demands, serial processing in von Neumann architectures built with zeroth-order complexity digital circuits is saturating in computational capacity and power, entailing research into alternative paradigms. Brain-inspired systems built with memristors are attractive owing to their large parallelism, low energy consumption, and high error tolerance. However, most demonstrations have thus far only mimicked primitive lower-order biological complexities using devices with first-order dynamics. Memristors with higher-order complexities are predicted to solve problems that would otherwise require increasingly elaborate circuits, but no generic design rules exist. Here, we present second-order dynamics in halide perovskite mem-ristive diodes (memdiodes) that enable Bienenstock-Cooper-Munro learning rules capturing both timing-and rate-based plasticity. A triplet spike timing-dependent plasticity scheme exploiting ion migration, back diffu-sion, and modulable Schottky barriers establishes general design rules for realizing higher-order memristors. This higher order enables complex binocular orientation selectivity in neural networks exploiting the intrinsic physics of the devices, without the need for complicated circuitry.
引用
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页数:1
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