Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs

被引：0
|
作者：
Spinelli, Alessandro S. [1 ]
Compagnoni, Christian Monzio [1 ]
Lacaita, Andrea L. [1 ]
机构：
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
来源：
2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2018年
关键词：
Nanowire MOSFET; Macaroni MOSFET; random dopant fluctuations; random telegraph noise; NANOSCALE MOS DEVICES; INDUCED VARIABILITY; GATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a systematic investigation of random dopant fluctuations and random telegraph noise instabilities in Nanowire and Macaroni MOSFETs via 3D atomistic Monte Carlo simulations. We discuss their dependence on geometry and doping and show that different trends appear with respect to planar devices. Some unexpected results are explained in terms of 3D percolation and electrostatic integrity of the structures.
引用
收藏
页码：230 / 233
页数：4
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