Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates

被引：3

作者：

Huang, Shih-Yung ^{[1
]}

Horng, Ray-Hua ^{[2
]}

Wang, Wei-Kai ^{[1
]}

Wuu, Don-Sing ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 402, Taiwan

[2] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565359

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates by a combination of laser lift-off and wafer bonding techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top (5-pairs) and bottom (7.5-pairs) dielectric TiO2/SiO2 distributed Bragg reflector (DBR) with an optical reflectance of 85 and 99.9%, respectively. The cavity mode of the RCLED shows a linewidth of 5.5 nm at a main emission peak at 525 run. The emission full width at half maximum can decrease from 48 to 35 nm, indicating the effect of the DBR microcavity. The quality factor for this resonant cavity structure was estimated to be approximately 100. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2137 / 2140

页数：4

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