Dot-array resist patterning using scanning probe microscopy with a hybrid current-voltage control method

被引：2

作者：

Ishibashi, M ^{[1
]}

Heike, S ^{[1
]}

Hashizume, T ^{[1
]}

机构：

[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6B期

关键词：

AFM; SPM; nanolithography; lithography; nanofabrication;

D O I：

10.1143/JJAP.41.4395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a resist-patterning method by scanning probe lithography using raster scan writing and a new form of exposure control. The exposure control method, hybrid current-voltage control, is a combination of the conventional constant-voltage and constant-current control methods, and it is superior to the conventional methods for drawing dot patterns. We have used the drawing method to fabricate complex resist patterns with a resolution of 60nm using a 50-nm-thick resist film.

引用

页码：4395 / 4399

页数：5

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