Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

被引：4

作者：

Tsubaki, K ^{[1
]}

Maeda, N ^{[1
]}

Saitoh, T ^{[1
]}

Nishida, T ^{[1
]}

Kobayashi, N ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

AlGaN; GaN; two-dimensional electron gas; subband; magnetoresistance;

D O I：

10.1016/S1386-9477(02)00315-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlGaN/GaN heterostructure devices have recently been attracting much attention because of their potential for microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures have recently been discussed. In this paper, we have studied the subbands of the 2DEG in AlGaN/GaN heterostructures by magnetoresistance measurements for the backgate voltages between 0 and -20 V up to 8 T. Since two kinds of periodic oscillations are observed, the existence of two subbands, the ground-subband and the first-excited-subband, is confirmed. The gate-voltage dependence of the electron concentration in each subband exhibits similar behaviour to the gate-voltage dependence of the electron concentration in AlGaAs/GaAs heterostructures. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1111 / 1114

页数：4

共 9 条

[1] Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses [J].

Jiang, CP ;

Guo, SL ;

Huang, ZM ;

Yu, J ;

Gui, YS ;

Zheng, GZ ;

Chu, JH ;

Zheng, ZW ;

Shen, B ;

Zheng, YD .

APPLIED PHYSICS LETTERS, 2001, 79 (03) :374-376

[2] Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect [J].

Maeda, N ;

Saitoh, T ;

Tsubaki, K ;

Nishida, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (7B) :L799-L801

[3] Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors [J].

Maeda, N ;

Saitoh, T ;

Tsubaki, K ;

Nishida, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2000, 76 (21) :3118-3120

[4] Superior pinch-off characteristics at 400°C in AlGaN/GaN heterostructure field effect transistors [J].

Maeda, N ;

Saitoh, T ;

Tsubaki, K ;

Nishida, T ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L987-L989

[5] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].

Smorchkova, IP ;

Elsass, CR ;

Ibbetson, JP ;

Vetury, R ;

Heying, B ;

Fini, P ;

Haus, E ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526

[6]

STOMER HL, 1982, SOLID STATE COMMUN, V41, P707

[7]

Tsubaki K, 2001, SPRINGER PROC PHYS, V87, P1593

[8] Electron mobility exceeding 104 cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate [J].

Wang, T ;

Ohno, Y ;

Lachab, M ;

Nakagawa, D ;

Shirahama, T ;

Sakai, S ;

Ohno, H .

APPLIED PHYSICS LETTERS, 1999, 74 (23) :3531-3533

[9] Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures [J].

Zheng, ZW ;

Shen, B ;

Zhang, R ;

Gui, YS ;

Jiang, CP ;

Ma, ZX ;

Zheng, GZ ;

Guo, SL ;

Shi, Y ;

Han, P ;

Zheng, YD ;

Someya, T ;

Arakawa, Y .

PHYSICAL REVIEW B, 2000, 62 (12) :R7739-R7742

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