Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles

被引：5

作者：

Useinov, A. N. ^{[1
,2
,3
]}

Useinov, N. Kh. ^{[2
]}

Ye, L. -X. ^{[3
]}

Wu, T. -H. ^{[4
]}

Lai, C. -H. ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] Kazan Fed Univ, Dept Solid State Phys, Kazan 420008, Russia

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Touliu 640, Taiwan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2015年 / 51卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

Ballistic transport; magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); nanoparticles (NPs); tunnel magnetoresistance (TMR);

D O I：

10.1109/TMAG.2015.2451705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry.

引用

页数：4

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