A Review of Hydrophilic Silicon Wafer Bonding

被引：94

作者：

Masteika, V. ^{[1
]}

Kowal, J. ^{[1
]}

Braithwaite, N. St J. ^{[1
]}

Rogers, T. ^{[2
]}

机构：

[1] Open Univ, Milton Keynes MK7 6AA, Bucks, England

[2] Appl Microengn Ltd, Didcot OX11 0SG, Oxon, England

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 04期

关键词：

ROOM-TEMPERATURE WAFER; X-RAY PHOTOELECTRON; BONDED SILICON; OXYGEN PLASMA; SURFACE ACTIVATION; OXIDE; INTERFACE; ENERGY; MODEL; PRETREATMENT;

D O I：

10.1149/2.007403jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：Q42 / Q54

页数：13

共 124 条

[1] Low temperature GaAs/Si direct wafer bonding [J].