Silicon heterojunction solar cell with passivated hole selective MoOx contact

被引：365

作者：

Battaglia, Corsin ^{[1
,2
]}

de Nicolas, Silvia Martin ^{[3
]}

De Wolf, Stefaan ^{[3
]}

Yin, Xingtian ^{[1
,2
]}

Zheng, Maxwell ^{[1
,2
]}

Ballif, Christophe ^{[3
]}

Javey, Ali ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Ecole Polytech Fed Lausanne, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

WORK FUNCTION; METAL-OXIDES; EFFICIENCY; VOLTAGE;

D O I：

10.1063/1.4868880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm(2) in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors. (C) 2014 AIP Publishing LLC.

引用

页数：5

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