Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions

被引:10
作者
Heun, S
Paggel, JJ
Sorba, L
Rubini, S
Franciosi, A
Bonard, JM
Ganiere, JD
机构
[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455
[2] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECT,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND
[3] CNR,IST ICMAT,I-00016 ROME,ITALY
[4] UNIV TRIESTE,DIPARTIMENTO FIS,I-34127 TRIESTE,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.589451
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band alignment. Here we demonstrate that the local interface composition in pseudomorphic, strained ZnSe/GaAs(001) heterostructures as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures also have a dramatic effect on the nucleation of native stacking fault defects. Such extended defects have been associated with the early degradation of blue-green lasers. We found, in particular, that Se-rich interfaces consistently exhibited a density of Shockley stacking fault pairs below our detection limit and three to four orders of magnitude lower than those encountered at interfaces fabricated in Zn-rich conditions. (C) 1997 American Vacuum Society. [S0734-211X(97)09104-X].
引用
收藏
页码:1279 / 1285
页数:7
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