High yield uniformity in pseudo-vertical diamond Schottky barrier diodes fabricated on half-inch single-crystal wafers

被引：20

作者：

Hanada, Takanori ^{[1
]}

Ohmagari, Shinya ^{[2
,3
]}

Kaneko, Junichi H. ^{[1
]}

Umezawa, Hitoshi ^{[2
]}

机构：

[1] Hokkaido Univ, Fac Engn, Kita Ku, Kita 13,Nishi 8, Sapporo, Hokkaido 0608628, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

[3] Natl Inst Adv Ind Sci & Technol, Sensing Syst Res Ctr, 807-1 Shuku Machi, Tosu, Saga 8410052, Japan

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 26期

关键词：

HOMOEPITAXIAL DIAMOND; OHMIC CONTACT; HIGH-VOLTAGE; MECHANISM; GROWTH;

D O I：

10.1063/5.0027729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated diamond pseudo-vertical Schottky barrier diodes using a half-inch semi-insulative diamond (100) wafer. Most diodes exhibited a large rectifying ratio (>10(10)) with undetectable leakage current at a reverse bias of 5V (0.6MV cm(-1)), with only 2% of diodes exhibiting an Ohmic-like leakage current. Surface defects were observed under the Schottky barrier diode, and their impacts on electrical properties were analyzed using a Murphy model and correlation factor analysis. We found that most crystalline defects (surface hillocks) were electrically non-active and that non-epitaxial crystallites and process-related field-plate cracks were the main defects that induced a large leakage current. Schottky barrier diodes without such killer defects showed a high electric field strength of similar to 5MV cm(-1).

引用

页数：6

共 35 条

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