Ultrashort dead time of photon-counting InGaAs avalanche photodiodes

被引：55

作者：

Dixon, A. R. ^{[1
,2
]}

Dynes, J. F. ^{[1
]}

Yuan, Z. L. ^{[1
]}

Sharpe, A. W. ^{[1
]}

Bennett, A. J. ^{[1
]}

Shields, A. J. ^{[1
]}

机构：

[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0GZ, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期

关键词：

avalanche photodiodes; gallium arsenide; III-V semiconductors; indium compounds; photodetectors; photon counting; quantum computing; quantum cryptography; semiconductor lasers; QUANTUM KEY DISTRIBUTION; DETECTOR;

D O I：

10.1063/1.3151864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation function g((2)) of the emission from a diode laser with a single detector that works reliably at high speed owing to the extremely short dead time of the detector. The device is ideal for high bit rate fiber wavelength quantum key distribution and photonic quantum computing.

引用

页数：3

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