Modeling Radiation-Induced Scattering in Graphene

被引：7

作者：

Esqueda, I. Sanchez ^{[1
]}

Cress, C. D. ^{[2
]}

机构：

[1] Univ So Calif, Inst Informat Sci, Marina Del Rey, CA 90292 USA

[2] Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

Ballistic transport; conductivity; FETs; graphene; ionizing radiation; mean free path; mobility; scattering; TRANSISTORS;

D O I：

10.1109/TNS.2015.2477445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we analyze and model conductivity (sigma) and mobility (mu) degradation in graphene due to total ionizing dose (TID)-induced carrier scattering effects. The analysis technique presented in this paper utilizes in situ measurements of low-field transport in graphene samples irradiated with gamma rays (Co-60) in multiple doses up to 2 Mrad(Si). The carrier backscattering mean free path (lambda) is extracted as a function of ionizing radiation by fitting the measurements with analytical calculations of conductivity in graphene derived from scattering theory. This derivation is based on the Landauer approach and incorporates the linear dispersion relation near the Dirac point, and the two-dimensional (2-D) structure of graphene. The extractions of lambda are used to model the impact of radiation-induced scattering on the conductance (G) of graphene FETs as a function of channel length (L) from the diffusive (i.e., for L >> lambda) to the ballistic limit (i.e., for L << lambda).

引用

页码：2906 / 2911

页数：6

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