Time evolution of the infrared laser ablation plasma plume of SiO

被引：11
作者：
Diaz, L. [1 ]
Camacho, J. J. [2 ]
Cid, J. P. [2 ]
Martin, M. [3 ]
Poyato, J. M. L. [2 ]
机构：
[1] CSIC, Inst Estruct Mat, Madrid 28006, Spain
[2] Fac Ciencias UAM, Dept Quim Fis Aplicada, Madrid 28049, Spain
[3] CSIC, Inst Quim Fis Rocasolano, E-28006 Madrid, Spain
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 117卷 / 01期
关键词：
Electromagnetic wave emission - Ionization - Molecular oxygen - Optical emission spectroscopy - Laser ablation - Silicon oxides - Pulsed lasers;
D O I：
10.1007/s00339-014-8287-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spatio-temporal evolution of the silicon monoxide SiO plasma produced by a high-power CO2 pulsed laser has been investigated using optical emission spectroscopy (OES) and imaging methods. The formed plasma was found to be strongly ionized, yielding Si+, O+, Si2+, O2+ and Si3+ species, rich in neutral silicon and oxygen atoms, and very weak molecular bands of SiO time-integrated and time-resolved two-dimensional OES plasma profiles were recorded as a function of emitted wavelength and distance from the target. The temporal behavior of specific emission lines of Si, Si+, O+, Si2+ and O2+ was characterized. The results show a faster decay of O2+ and Si2+ than that of O+, Si+ and Si. The Stark broadening of isolated single-ionized silicon emission lines was employed for deducing the electron density during the plasma expansion. The relative intensities of two Si2+ lines were used to calculate the time evolution of the plasma temperature.
引用
收藏
页码：125 / 129
页数：5
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