Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

被引：193

作者：

Kinoshita, K. ^{[1
]}

Tamura, T. ^{[1
]}

Aoki, M. ^{[1
]}

Sugiyama, Y. ^{[1
]}

Tanaka, H. ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.2339032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the data retention properties of NiOy resistors exposed to sputtered particles and found that they depended on the bias polarity used to program the data. Only the data in the high resistance state programmed by applying positive bias to the top electrode were easily damaged. This suggests that the "reset" process can take place when the anodic side of the conductive filaments, which were formed during the "forming" process, is insulated. In addition, the data retention test for thermal stress suggests that the reset process can take place thermally. (c) 2006 American Institute of Physics.

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页数：3

相关论文

共 16 条

[1]

Baek IG, 2005, INT EL DEVICES MEET, P769

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].

Choi, BJ ;

Jeong, DS ;

Kim, SK ;

Rohde, C ;

Choi, S ;

Oh, JH ;

Kim, HJ ;

Hwang, CS ;

Szot, K ;

Waser, R ;

Reichenberg, B ;

Tiedke, S .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[4] A MODEL RELATING WEAROUT TO BREAKDOWN IN THIN OXIDES [J].

DUMIN, DJ ;

MADDUX, JR ;

SCOTT, RS ;

SUBRAMONIAM, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (09) :1570-1580

[5] SWITCHING PROPERTIES OF THIN NIO FILMS [J].

GIBBONS, JF ;

BEADLE, WE .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&

[6]

Hofmann S, 1982, J TRACE MICROPROBE T, V1, P213

[7] Fabrication of nickel oxide nanostructures by atomic force microscope nano-oxidation and wet etching [J].

Hsu, JH ;

Lai, HW ;

Lin, HN ;

Chuang, CC ;

Huang, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2599-2601

[8] Reasons for obtaining an optical dielectric constant from the Poole-Frenkel conduction behavior of atomic-layer-deposited HfO2 films -: art. no. 0729030 [J].

Jeong, DS ;

Park, HB ;

Hwang, CS .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[9] X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF NICKEL-OXYGEN SURFACES USING OXYGEN AND ARGON ION-BOMBARDMENT [J].

KIM, KS ;

WINOGRAD, N .

SURFACE SCIENCE, 1974, 43 (02) :625-643

[10] Study of transport and dielectric of resistive memory states in NiO thin film [J].

Kim, MG ;

Kim, SM ;

Choi, EJ ;

Moon, SE ;

Park, J ;

Kim, HC ;

Park, BH ;

Lee, MJ ;

Seo, S ;

Seo, DH ;

Ahn, SE ;

Yoo, IK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45) :L1301-L1303