GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections

被引：8

作者：

Ohira, Kazuya

Murayama, Tomonori

Ullah, Saeed Mahmud

Yagi, Hideki

Arai, Shigehisa

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 11期

关键词：

distributed feedback laser; distributed Bragg reflector; GaInAsP/InP; quantum wire; EB lithography; integration;

D O I：

10.1587/elex.2.356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-threshold-current distributed reflector laser consisting of phase-shifted distributed feedback (DFB) grating and quantum-wire distributed Bragg reflector (DBR) sections was realized. The device with a DFB length of 150 mu m, a DBR length of 240 mu m and a stripe width of 1.5 mu m achieved a threshold current as low as 1.2 mA and a differential quantum efficiency of 13% from the front facet under RT-CW conditions. A good single-mode operation was also realized at a mode determined by the phase-shifted grating.

引用

页码：356 / 361

页数：6