GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections

被引:8
|
作者
Ohira, Kazuya
Murayama, Tomonori
Ullah, Saeed Mahmud
Yagi, Hideki
Arai, Shigehisa
机构
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
来源
IEICE ELECTRONICS EXPRESS | 2005年 / 2卷 / 11期
关键词
distributed feedback laser; distributed Bragg reflector; GaInAsP/InP; quantum wire; EB lithography; integration;
D O I
10.1587/elex.2.356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-threshold-current distributed reflector laser consisting of phase-shifted distributed feedback (DFB) grating and quantum-wire distributed Bragg reflector (DBR) sections was realized. The device with a DFB length of 150 mu m, a DBR length of 240 mu m and a stripe width of 1.5 mu m achieved a threshold current as low as 1.2 mA and a differential quantum efficiency of 13% from the front facet under RT-CW conditions. A good single-mode operation was also realized at a mode determined by the phase-shifted grating.
引用
收藏
页码:356 / 361
页数:6
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