Laser-induced persistent photovoltage on the surface of a ternary topological insulator at room temperature

被引：23

作者：

Sanchez-Barriga, J. ^{[1
]}

Battiato, M. ^{[2
]}

Golias, E. ^{[1
]}

Varykhalov, A. ^{[1
]}

Yashina, L. V. ^{[3
]}

Kornilov, O. ^{[4
]}

Rader, O. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

[2] Vienna Univ Technol, Inst Solid State Phys, A-1040 Vienna, Austria

[3] Moscow MV Lomonosov State Univ, Dept Chem, Leninskie Gory 1-3, Moscow 119991, Russia

[4] Max Born Inst, Max Born Str 2 A, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 14期

基金：

奥地利科学基金会;

关键词：

DIRAC CONE; STATES;

D O I：

10.1063/1.4979596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using time-and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi1-xSbx)(2)Te-3 to fs-infrared pulses. We demonstrate that at the critical concentration x = 0.55, where the system becomes bulk insulating, a surface voltage can be driven at room temperature through the topological surface state solely by optical means. We further show that such a photovoltage persists over a time scale that exceeds similar to 6 mu s, i.e, much longer than the characteristic relaxation times of bulk states. We attribute the origin of the photovoltage to a laser-induced band-bending effect which emerges near the surface region on ultrafast time scales. The photovoltage is also accompanied by a remarkable increase in the relaxation times of excited states as compared to undoped topological insulators. Our findings are relevant in the context of applications of topological surface states in future optical devices. Published by AIP Publishing.

引用

页数：5

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